• 陶封分立功放管

    Part Number Package Band(MHz) Ppeak(W) Pout(dBm) Eff@Pout(%) Power Gain(dB) Status Download
    DF2G5060-140EF2 780P2 5000~6000 140 50.5 54.2 9.5 Engineering Sample
    DF2G4460-50DF2 360F1 4400~6000 50.0 47.7 60.8 8.9 Engineering Sample
    DF2G4460-30DF2 360F1 4400~6000 30.0 45.5 58.9 9.2 Engineering Sample
    DF2H0014-350EF 780P2 DC~1400 350 55.8 67.0 18.2 Engineering Sample
    DF2G1020-120CF 400P1 1000~2000 120 51.0 69.0 19.3 Engineering Sample
    DF2G0060-25DF 200F1 DC~6000 25.0 45.7 78.0 12.8 Engineering Sample
    DF2G0040-35DF 360F1 DC~4000 35.0 47.2 67.2 14.2 Engineering Sample
    DF2G0040-45DF 360F1 DC~4000 45.0 48.2 70.6 12.1 Engineering Sample
    DF2G0026-330FF 650F2 DC~2600 330 53.1 74.6 15.1 Engineering Sample
    DF2G0030-180FF 650F2 DC~3000 180 51.6 81.0 16.4 Engineering Sample
    DF2G0030-120DF 360F1 DC~3000 120 51.0 75.9 13.9 Engineering Sample
    DF2G0040-90DF 360F1 DC~4000 90.0 51.0 80.6 14.8 Engineering Sample
    DF2G0060-10DF 200F1 DC~6000 10.0 42.1 77.2 17.5 Engineering Sample
    DXG1CH59B-30DF 360F1 5000~6000 35.0 55.0 30.0 16.0 Released Product
    DF2G0040-45CF 360P1 DC~4000 45.0 48.2 70.6 12.1 Engineering Sample
    DF2G0030-120CF 360P1 DC~3000 120 51.0 75.9 13.9 Engineering Sample
    DF2H0026-650FF 650F2 DC~2600 650 56.0 62.9 24.5 Engineering Sample
    DF2H0014-175DF 400F1 DC~1400 175 52.8 67.0 18.2 Engineering Sample
    DF2H0014-175CF 400P1 DC~1400 175 52.8 67.0 18.2 Engineering Sample
    DF1H0015-900EF 780P2 DC~1500 900 58.7 74.5 17.4 Engineering Sample
    Test condition: Single-Carrier W-CDMA, IQ magnitude clipping, Input signal PAR = 7.5 dB @ 0.01 % probability on CCDF. ACPR measured in 3.84 MHz channel bandwidth @ ±5 MHz offset.

    DF2G5060-140EF2

    Brief description for the product

    DF2G5060-140EF2

    DF2G5060-140EF2 is a 140 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    5000

    MHz

    Frequency (Max.)

    6000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat @ 5000 MHz

    50.5

    dBm

    Power Gain @ 5000 MHz

    9.7

    dB

    Efficiency @ 5000 MHz

    63.3

    %


    Note: Measured in the DF2G5060-140EF2 application circuit, test condition: VDS = 28 V, IDQ = 100 mA.



    DF2G4460-50DF2

    Brief description for the product

    DF2G4460-50DF2

    DF2G4460-50DF2 is a 50 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    4400

    MHz

    Frequency (Max.)

    6000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat @ 5700 MHz

    48.1

    dBm

    Power Gain @ 5700 MHz

    9.4

    dB

    Efficiency @ 5700 MHz

    61.0

    %


    Note: Measured in the DF2G440-50DF2 application circuit, test condition: VDS = 28 V, IDQ = 400 mA.



    DF2G4460-30DF2

    Brief description for the product

    DF2G4460-30DF2

    DF2G4460-30DF2 is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 4400 to 6000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    4400

    MHz

    Frequency (Max.)

    6000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat @ 5500 MHz

    46.0

    dBm

    Power Gain @ 5500 MHz

    9.5

    dB

    Efficiency @ 5500 MHz

    66.6

    %


    Note: Measured in the DF2G440-30DF2 application circuit, test condition: VDS = 28 V, IDQ = 200 mA,



    DF2H0014-350EF

    Brief description for the product

    DF2H0014-350EF

    DF2H0014-350EF is a 350 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    1400

    MHz

    Supply Voltage (Typ.)

    48

    V

    Psat1 @ 990 MHz

    55.8

    dBm

    Power Gain2 @ 990 MHz

    18.2

    dB

    Efficiency2@ 990 MHz

    67

    %


    Note: Measured in the DF2H0014-350DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

    1. The output power is saturated power.

    2. Test condition: Based on Pout. = 350 W.


    DF2G1020-120CF

    Brief description for the product

    DF2G1020-120CF

    DF2G1020-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 1000 to 2000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    6000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat1 @ 1800 MHz

    51

    dBm

    Power Gain2 @ 1800 MHz

    19.3

    dB

    Efficiency2@ 1800 MHz

    69

    %


    Note: Measured in the DF2G1020-120CF application circuit, test condition: VDS = 28 V, IDQ = 450 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. Test condition: Based on Maximum Output Power.

    2. Test condition: Based on Maximum Drain Efficiency.


    DF2G0060-25DF

    Brief description for the product

    DF2G0060-25DF

    DF2G0060-25DF is a 25 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    6000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat1 @ 2600 MHz

    45.7

    dBm

    Power Gain2 @ 2600 MHz

    12.8

    dB

    Efficiency2@ 2600 MHz

    78

    %


    Note: Measured in the DF2G0060-25DF application circuit, test condition: VDS = 28 V, IDQ = 80 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. Test condition: Based on Maximum Output Power.

    2. Test condition: Based on Maximum Drain Efficiency.


    DF2G0040-35DF

    Brief description for the product

    DF2G0040-35DF

    DF2G0040-35DF is a 35 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    4000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat1 @ 4000 MHz

    47.2

    dBm

    Power Gain2 @ 4000 MHz

    14.2

    dB

    Efficiency2@ 4000 MHz

    67.7

    %


    Note: Measured in the DF2G0040-35DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. Test condition: Based on Maximum Output Power.

    2. Test condition: Based on Maximum Drain Efficiency.


    DF2G0040-45DF

    Brief description for the product

    DF2G0040-45DF

    DF2G0040-45DF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    4000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat1 @ 4000 MHz

    48.2

    dBm

    Power Gain2 @ 4000 MHz

    12.1

    dB

    Efficiency2@ 4000 MHz

    70.6

    %


    Note: Measured in the DF2G0040-45DF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. Test condition: Based on Maximum Output Power.

    2. Test condition: Based on Maximum Drain Efficiency.


    DF2G0026-330FF

    Brief description for the product

    DF2G0026-330FF

    DF2G0026-330FF is a 330 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    2600

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat1 @ 2500 MHz

    53.1

    dBm

    Power Gain2 @ 2500 MHz

    15.1

    dB

    Efficiency2@ 2500 MHz

    74.6

    %


    Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 28 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. Test condition: Based on one side Maximum Output Power.

    2. Test condition: Based on one side Maximum Drain Efficiency.


    DF2G0030-180FF

    Brief description for the product

    DF2G0030-180FF

    DF2G0030-180FF is a 180 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    3000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat1 @ 2500 MHz

    51.6

    dBm

    Power Gain2 @ 2500 MHz

    16.4

    dB

    Efficiency2@ 2500 MHz

    81.0

    %


    Note: Measured in the DF2G0030-180FF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. Test condition: Based on Maximum Output Power.

    2. Test condition: Based on Maximum Drain Efficiency.


    DF2G0030-120DF

    Brief description for the product

    DF2G0030-120DF

    DF2G0030-120DF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    3000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat1 @ 2500 MHz

    51.4

    dBm

    Power Gain2 @ 2500 MHz

    15.3

    dB

    Efficiency2@ 2500 MHz

    82.3

    %


    Note: Measured in the DF2G0030-120DF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. Test condition: Based on Maximum Output Power.

    2. Test condition: Based on Maximum Drain Efficiency.


    DF2G0040-90DF

    Brief description for the product

    DF2G0040-90DF

    DF2G0040-90DF is a 90 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    4000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat1 @ 2500 MHz

    51

    dBm

    Power Gain2 @ 2500 MHz

    11.9

    dB

    Efficiency2@ 2500 MHz

    80.6

    %


    Note: Measured in the DF2G0040-90DF application circuit, test condition: VDS = 28 V, IDQ = 400 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. Test condition: Based on Maximum Output Power.

    2. Test condition: Based on Maximum Drain Efficiency.


    DF2G0060-10DF

    Brief description for the product

    DF2G0060-10DF

    DF2G0060-10DF is a 10 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 6000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    6000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat1 @ 2600 MHz

    42.1

    dBm

    Power Gain2 @ 2600 MHz

    17.5

    dB

    Efficiency2@ 2600 MHz

    77.2

    %


    Note: Measured in the DF2G0060-10DF application circuit, test condition: VDS = 28 V, IDQ = 50 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. Test condition: Based on Maximum Output Power.

    2. Test condition: Based on Maximum Drain Efficiency.


    DXG1CH59B-30DF

    Brief description for the product

    DXG1CH59B-30DF

    DXG1CH59B-30DF is a 30 W RF GaN HEMT Transistor with first generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from 5000 to 6000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    5000

    MHz

    Frequency (Max.)

    6000

    MHz

    Supply Voltage (Typ.)

    48

    V

    Psat

    55

    dBm

    Power Gain

    16

    dB

    Efficiency

    30

    %


    Note: Measured in the DXG1CH59B-30DF application circuit, test condition: VDS = 48 V, IDQ = 80 mA, Pavg = 9 W,Pulse width = 100 μs, Duty cycle = 10 %.


    DF2G0040-45CF

    Brief description for the product

    DF2G0040-45CF

    DF2G0040-45CF is a 45 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 4000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    4000

    MHz

    Supply Voltage (Typ.)

    28

    V

    Psat1 @ 4000 MHz

    48.2

    dBm

    Power Gain2 @ 4000 MHz

    12.1

    dB

    Efficiency2@ 4000 MHz

    70.6

    %


    Note: Measured in the DF2G0040-45CF application circuit, test condition: VDS = 28 V, IDQ = 120 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. Test condition: Based on Maximum Output Power.

    2. Test condition: Based on Maximum Drain Efficiency.


    DF2G0030-120CF

    Brief description for the product

    DF2G0030-120CF

    DF2G0030-120CF is a 120 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 3000 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    3000

    MHz

    Supply Voltage (Typ.)

    48

    V

    Psat1 @ 2500 MHz

    51.4

    dBm

    Power Gain2 @ 2500 MHz

    15.3

    dB

    Efficiency2@ 2500 MHz

    82.3

    %


    Note: Measured in the DF2G0030-120CF application circuit, test condition: VDS = 28 V, IDQ = 200 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. Test condition: Based on Maximum Output Power.

    2. Test condition: Based on Maximum Drain Efficiency.


    DF2H0026-650FF

    Brief description for the product

    DF2H0026-650FF

    DF2H0026-650FF is a 650 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 2600 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    2600

    MHz

    Supply Voltage (Typ.)

    48

    V

    Psat1 @ 678 MHz

    56

    dBm

    Power Gain2 @ 678 MHz

    24.5

    dB

    Efficiency1@ 678 MHz

    62.9

    %


    Note: Measured in the DF2H0026-650FF application circuit, test condition: VDS = 48 V, IDQ = 300 mA, Pulse width = 100 μs, Duty cycle = 10 %.

    1. The output power is saturated power.

    2. Test condition: Based on rollback gain @ 50 dbm.


    DF2H0014-175DF

    Brief description for the product

    DF2H0014-175DF

    DF2H0014-175DF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    1400

    MHz

    Supply Voltage (Typ.)

    48

    V

    Psat1 @ 990 MHz

    52.8

    dBm

    Power Gain2 @ 990 MHz

    18.2

    dB

    Efficiency2@ 910 MHz

    67.0

    %


    Note: Measured in the DF2H0014-175DF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

    1. The output power is saturated power.

    2. Test condition: Based on Pout. = 175W.


    DF2H0014-175CF

    Brief description for the product

    DF2H0014-175CF

    DF2H0014-175CF is a 175 W RF GaN HEMT Transistor with second generation RF GaN technology from Dynax, which is ideal for cellular base station applications at frequencies from DC to 1400 MHz.

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    1400

    MHz

    Supply Voltage (Typ.)

    48

    V

    Psat1 @ 990 MHz

    52.8

    dBm

    Power Gain2 @ 990 MHz

    18.2

    dB

    Efficiency2@ 910 MHz

    67.0

    %


    Note: Measured in the DF2H0014-175CF application circuit, test condition: VDS = 48 V, IDQ = 250 mA, Pulse width = 350 μs, Duty cycle = 10 %.

    1. The output power is saturated power.

    2. Test condition: Based on Pout. = 175W.


    DF1H0015-900EF

    Operating Characteristics

    Parameter

    Value

    Unit

    Frequency (Min.)

    0

    MHz

    Frequency (Max.)

    1500

    MHz

    Supply Voltage (Typ.)

    50

    V

    Psat @ 910 MHz

    58.7

    dBm

    Power Gain1 @ 910 MHz

    18.6

    dB

    Efficiency1 @ 910 MHz

    68.8

    %


    Note: Measured in the DF1H0015-900EF application circuit, test condition: VDS = 50 V, IDQ = 600 mA.

    1.Test condition: Based on Pout = 58 dbm.